Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters

M. J. Uddin; A. N. Nordin; M. I. Ibrahimy; M. B.I. Reaz

doi:10.1109/APCCAS.2010.5774736

Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters

M. J. Uddin, A. N. Nordin, M. I. Ibrahimy, M. B.I. Reaz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z₁ = 35.04Ω and Z ₂ = 39.73Ω, while the insertion loss is S₂₁ = 2.47dB. Return loss S₁₁ and S₂₂ are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.

Original language	English
Title of host publication	Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010
Pages	284-287
Number of pages	4
DOIs	https://doi.org/10.1109/APCCAS.2010.5774736
Publication status	Published - 27 May 2011
Externally published	Yes
Event	2010 Asia Pacific Conference on Circuit and System, APCCAS 2010 - Kuala Lumpur, Malaysia Duration: 6 Dec 2010 → 9 Dec 2010

Publication series

Name	IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

Conference

Conference	2010 Asia Pacific Conference on Circuit and System, APCCAS 2010
Country/Territory	Malaysia
City	Kuala Lumpur
Period	6/12/10 → 9/12/10

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10.1109/APCCAS.2010.5774736

Cite this

Uddin, M. J., Nordin, A. N., Ibrahimy, M. I., & Reaz, M. B. I. (2011). Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters. In Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010 (pp. 284-287). Article 5774736 (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS). https://doi.org/10.1109/APCCAS.2010.5774736

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title = "Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters",

abstract = "Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z1 = 35.04Ω and Z 2 = 39.73Ω, while the insertion loss is S21 = 2.47dB. Return loss S11 and S22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.",

author = "Uddin, {M. J.} and Nordin, {A. N.} and Ibrahimy, {M. I.} and Reaz, {M. B.I.}",

year = "2011",

month = may,

day = "27",

doi = "10.1109/APCCAS.2010.5774736",

language = "English",

isbn = "9781424474561",

series = "IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS",

pages = "284--287",

booktitle = "Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010",

note = "2010 Asia Pacific Conference on Circuit and System, APCCAS 2010 ; Conference date: 06-12-2010 Through 09-12-2010",

}

Uddin, MJ, Nordin, AN, Ibrahimy, MI & Reaz, MBI 2011, Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters. in Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010., 5774736, IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS, pp. 284-287, 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010, Kuala Lumpur, Malaysia, 6/12/10. https://doi.org/10.1109/APCCAS.2010.5774736

Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters. / Uddin, M. J.; Nordin, A. N.; Ibrahimy, M. I. et al.
Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010. 2011. p. 284-287 5774736 (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Uddin, M. J.

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PY - 2011/5/27

Y1 - 2011/5/27

N2 - Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z1 = 35.04Ω and Z 2 = 39.73Ω, while the insertion loss is S21 = 2.47dB. Return loss S11 and S22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.

AB - Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z1 = 35.04Ω and Z 2 = 39.73Ω, while the insertion loss is S21 = 2.47dB. Return loss S11 and S22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.

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Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters

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