Design and simulation of 4GHz UWB CMOS LNA for RFID systems

M. Jasim Uddin*, Muhammad Jafar Sadeq, M. Jalalifar

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Design, development and simulation results of an integrated 4 GHz ultra wide band CMOS low noise amplifier (LNA) are presented. The proposed amplifier is designed to use for RFID systems, especially in receiver applications. The amplifier employs an input band pass Chebyshev filter. It provides a forward gain (S21) of 18.42 dB and reverse gain (S12) of 4.01 dB with input reflection of only 9.9 dB while drawing 30 mW from a 1.5 V supply. A detailed analysis of the LNA architecture is presented, including a discussion on the effects of induced S-parameter analysis, phase shift and Smith chart analysis, and power transmission characteristics.

Original languageEnglish
Title of host publication2012 International Conference on Informatics, Electronics and Vision, ICIEV 2012
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages632-635
Number of pages4
ISBN (Print)9781467311519
DOIs
Publication statusPublished - 4 Oct 2012
Externally publishedYes
Event2012 1st International Conference on Informatics, Electronics and Vision, ICIEV 2012 - Dhaka, Bangladesh
Duration: 18 May 201219 May 2012

Publication series

Name2012 International Conference on Informatics, Electronics and Vision, ICIEV 2012

Conference

Conference2012 1st International Conference on Informatics, Electronics and Vision, ICIEV 2012
Country/TerritoryBangladesh
CityDhaka
Period18/05/1219/05/12

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