Design and simulation of RF-CMOS spiral inductors for ISM band RFID reader circuits

M. J. Uddin; A. N. Nordin; M. I. Ibrahimy; M. B.I. Reaz; T. Z.A. Zulkifli; M. A. Hasan

doi:10.1109/WMED.2009.4816153

Design and simulation of RF-CMOS spiral inductors for ISM band RFID reader circuits

M. J. Uddin
, A. N. Nordin
, M. I. Ibrahimy
, M. B.I. Reaz
, T. Z.A. Zulkifli
, M. A. Hasan

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion Cynhadledd › Cyfraniad mewn cynhadledd › adolygiad gan gymheiriaid

6 Dyfyniadau (Scopus)

Crynodeb

The recent popularity of RFID tags has generatedresearch for accompanying miniature, low-power reader circuits.This work illustrates the design of RF complementary metaloxide-semiconductor (CMOS) process compatible spiralinductors. Several simulators such as AWR Microwave Office®, SONNET®, and finite element program CST were used toprovide its S21 and S31 transmission characteristics, approximateand finalized design layout values respectively. This designutilized Silterra 0.18 μm RF-CMOS technology processparameters. Simulation results indicate that inductors corediameters must be adequately large (more than 100 μm) toensure high quality factor characteristics and its conductorspacing should be minimal to obtain larger per unit areainductive value. The proposed design methodology optimizes theconductor width of inductors to allow alignment of the peakquality factor with the circuit's operating frequency, therebyenhancing the input/output matching characteristics and Sparameterextraction in the GHz region.

Iaith wreiddiol	Saesneg
Teitl	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009
Tudalennau	81-84
Nifer y tudalennau	4
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1109/WMED.2009.4816153
Statws	Cyhoeddwyd - 21 Ebr 2009
Cyhoeddwyd yn allanol	Ie
Digwyddiad	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009 - Boise, ID, Yr Unol Daleithiau Hyd: 3 Ebr 2009 → 3 Ebr 2009

Cyfres gyhoeddiadau

Enw	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

Cynhadledd

Cynhadledd	2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009
Gwlad/Tiriogaeth	Yr Unol Daleithiau
Dinas	Boise, ID
Cyfnod	3/04/09 → 3/04/09

Mynediad at Ddogfen

10.1109/WMED.2009.4816153

Ffeiliau eraill a chysylltiadau

Dolen i’r cyhoeddiad yn Scopus

Dyfynnu hyn

Uddin, M. J., Nordin, A. N., Ibrahimy, M. I., Reaz, M. B. I., Zulkifli, T. Z. A., & Hasan, M. A. (2009). Design and simulation of RF-CMOS spiral inductors for ISM band RFID reader circuits. Yn 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009 (tt. 81-84). erthygl 4816153 (2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009). https://doi.org/10.1109/WMED.2009.4816153

@inproceedings{7d109529396a41ffa6e9d62c1eba34b9,

title = "Design and simulation of RF-CMOS spiral inductors for ISM band RFID reader circuits",

abstract = "The recent popularity of RFID tags has generatedresearch for accompanying miniature, low-power reader circuits.This work illustrates the design of RF complementary metaloxide-semiconductor (CMOS) process compatible spiralinductors. Several simulators such as AWR Microwave Office{\textregistered}, SONNET{\textregistered}, and finite element program CST were used toprovide its S21 and S31 transmission characteristics, approximateand finalized design layout values respectively. This designutilized Silterra 0.18 μm RF-CMOS technology processparameters. Simulation results indicate that inductors corediameters must be adequately large (more than 100 μm) toensure high quality factor characteristics and its conductorspacing should be minimal to obtain larger per unit areainductive value. The proposed design methodology optimizes theconductor width of inductors to allow alignment of the peakquality factor with the circuit's operating frequency, therebyenhancing the input/output matching characteristics and Sparameterextraction in the GHz region.",

keywords = "RFID reader, Spiral inductor., Splitter",

author = "Uddin, \{M. J.\} and Nordin, \{A. N.\} and Ibrahimy, \{M. I.\} and Reaz, \{M. B.I.\} and Zulkifli, \{T. Z.A.\} and Hasan, \{M. A.\}",

year = "2009",

month = apr,

day = "21",

doi = "10.1109/WMED.2009.4816153",

language = "English",

isbn = "9781424435524",

series = "2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009",

pages = "81--84",

booktitle = "2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009",

note = "2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009 ; Conference date: 03-04-2009 Through 03-04-2009",

}

Uddin, MJ, Nordin, AN, Ibrahimy, MI, Reaz, MBI, Zulkifli, TZA & Hasan, MA 2009, Design and simulation of RF-CMOS spiral inductors for ISM band RFID reader circuits. yn 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009., 4816153, 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009, tt. 81-84, 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009, Boise, ID, Yr Unol Daleithiau, 3/04/09. https://doi.org/10.1109/WMED.2009.4816153

Design and simulation of RF-CMOS spiral inductors for ISM band RFID reader circuits. / Uddin, M. J.; Nordin, A. N.; Ibrahimy, M. I. et al.
2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009. 2009. t. 81-84 4816153 (2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009).

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion Cynhadledd › Cyfraniad mewn cynhadledd › adolygiad gan gymheiriaid

TY - GEN

T1 - Design and simulation of RF-CMOS spiral inductors for ISM band RFID reader circuits

AU - Uddin, M. J.

AU - Nordin, A. N.

AU - Ibrahimy, M. I.

AU - Reaz, M. B.I.

AU - Zulkifli, T. Z.A.

AU - Hasan, M. A.

PY - 2009/4/21

Y1 - 2009/4/21

N2 - The recent popularity of RFID tags has generatedresearch for accompanying miniature, low-power reader circuits.This work illustrates the design of RF complementary metaloxide-semiconductor (CMOS) process compatible spiralinductors. Several simulators such as AWR Microwave Office®, SONNET®, and finite element program CST were used toprovide its S21 and S31 transmission characteristics, approximateand finalized design layout values respectively. This designutilized Silterra 0.18 μm RF-CMOS technology processparameters. Simulation results indicate that inductors corediameters must be adequately large (more than 100 μm) toensure high quality factor characteristics and its conductorspacing should be minimal to obtain larger per unit areainductive value. The proposed design methodology optimizes theconductor width of inductors to allow alignment of the peakquality factor with the circuit's operating frequency, therebyenhancing the input/output matching characteristics and Sparameterextraction in the GHz region.

AB - The recent popularity of RFID tags has generatedresearch for accompanying miniature, low-power reader circuits.This work illustrates the design of RF complementary metaloxide-semiconductor (CMOS) process compatible spiralinductors. Several simulators such as AWR Microwave Office®, SONNET®, and finite element program CST were used toprovide its S21 and S31 transmission characteristics, approximateand finalized design layout values respectively. This designutilized Silterra 0.18 μm RF-CMOS technology processparameters. Simulation results indicate that inductors corediameters must be adequately large (more than 100 μm) toensure high quality factor characteristics and its conductorspacing should be minimal to obtain larger per unit areainductive value. The proposed design methodology optimizes theconductor width of inductors to allow alignment of the peakquality factor with the circuit's operating frequency, therebyenhancing the input/output matching characteristics and Sparameterextraction in the GHz region.

KW - RFID reader

KW - Spiral inductor.

KW - Splitter

UR - https://www.scopus.com/pages/publications/67650161951

U2 - 10.1109/WMED.2009.4816153

DO - 10.1109/WMED.2009.4816153

M3 - Conference contribution

AN - SCOPUS:67650161951

SN - 9781424435524

T3 - 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

SP - 81

EP - 84

BT - 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

T2 - 2009 IEEE Workshop on Microelectronics and Electron Devices, WMED 2009

Y2 - 3 April 2009 through 3 April 2009

ER -