Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters

M. J. Uddin; A. N. Nordin; M. I. Ibrahimy; M. B.I. Reaz

doi:10.1109/APCCAS.2010.5774736

Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters

M. J. Uddin, A. N. Nordin, M. I. Ibrahimy, M. B.I. Reaz

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion Cynhadledd › Cyfraniad mewn cynhadledd › adolygiad gan gymheiriaid

1 Dyfyniad (Scopus)

Crynodeb

Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z₁ = 35.04Ω and Z ₂ = 39.73Ω, while the insertion loss is S₂₁ = 2.47dB. Return loss S₁₁ and S₂₂ are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.

Iaith wreiddiol	Saesneg
Teitl	Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010
Tudalennau	284-287
Nifer y tudalennau	4
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1109/APCCAS.2010.5774736
Statws	Cyhoeddwyd - 27 Mai 2011
Cyhoeddwyd yn allanol	Ie
Digwyddiad	2010 Asia Pacific Conference on Circuit and System, APCCAS 2010 - Kuala Lumpur, Malaisia Hyd: 6 Rhag 2010 → 9 Rhag 2010

Cyfres gyhoeddiadau

Enw	IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

Cynhadledd

Cynhadledd	2010 Asia Pacific Conference on Circuit and System, APCCAS 2010
Gwlad/Tiriogaeth	Malaisia
Dinas	Kuala Lumpur
Cyfnod	6/12/10 → 9/12/10

Mynediad at Ddogfen

10.1109/APCCAS.2010.5774736

Ffeiliau eraill a chysylltiadau

Dolen i’r cyhoeddiad yn Scopus

Dyfynnu hyn

Uddin, M. J., Nordin, A. N., Ibrahimy, M. I., & Reaz, M. B. I. (2011). Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters. Yn Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010 (tt. 284-287). erthygl 5774736 (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS). https://doi.org/10.1109/APCCAS.2010.5774736

@inproceedings{c8e73305b5974206aede5ff03a7f66a6,

title = "Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters",

abstract = "Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z1 = 35.04Ω and Z 2 = 39.73Ω, while the insertion loss is S21 = 2.47dB. Return loss S11 and S22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.",

author = "Uddin, {M. J.} and Nordin, {A. N.} and Ibrahimy, {M. I.} and Reaz, {M. B.I.}",

year = "2011",

month = may,

day = "27",

doi = "10.1109/APCCAS.2010.5774736",

language = "English",

isbn = "9781424474561",

series = "IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS",

pages = "284--287",

booktitle = "Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010",

note = "2010 Asia Pacific Conference on Circuit and System, APCCAS 2010 ; Conference date: 06-12-2010 Through 09-12-2010",

}

Uddin, MJ, Nordin, AN, Ibrahimy, MI & Reaz, MBI 2011, Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters. yn Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010., 5774736, IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS, tt. 284-287, 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010, Kuala Lumpur, Malaisia, 6/12/10. https://doi.org/10.1109/APCCAS.2010.5774736

Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters. / Uddin, M. J.; Nordin, A. N.; Ibrahimy, M. I. et al.
Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010. 2011. t. 284-287 5774736 (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS).

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion Cynhadledd › Cyfraniad mewn cynhadledd › adolygiad gan gymheiriaid

TY - GEN

T1 - Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters

AU - Uddin, M. J.

AU - Nordin, A. N.

AU - Ibrahimy, M. I.

AU - Reaz, M. B.I.

PY - 2011/5/27

Y1 - 2011/5/27

N2 - Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z1 = 35.04Ω and Z 2 = 39.73Ω, while the insertion loss is S21 = 2.47dB. Return loss S11 and S22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.

AB - Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z1 = 35.04Ω and Z 2 = 39.73Ω, while the insertion loss is S21 = 2.47dB. Return loss S11 and S22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.

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U2 - 10.1109/APCCAS.2010.5774736

DO - 10.1109/APCCAS.2010.5774736

M3 - Conference contribution

AN - SCOPUS:79959263433

SN - 9781424474561

T3 - IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

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EP - 287

BT - Proceedings of the 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010

T2 - 2010 Asia Pacific Conference on Circuit and System, APCCAS 2010

Y2 - 6 December 2010 through 9 December 2010

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