Design and simulation of 4GHz UWB CMOS LNA for RFID systems

M. Jasim Uddin*, Muhammad Jafar Sadeq, M. Jalalifar

*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion CynhadleddCyfraniad mewn cynhadleddadolygiad gan gymheiriaid

Crynodeb

Design, development and simulation results of an integrated 4 GHz ultra wide band CMOS low noise amplifier (LNA) are presented. The proposed amplifier is designed to use for RFID systems, especially in receiver applications. The amplifier employs an input band pass Chebyshev filter. It provides a forward gain (S21) of 18.42 dB and reverse gain (S12) of 4.01 dB with input reflection of only 9.9 dB while drawing 30 mW from a 1.5 V supply. A detailed analysis of the LNA architecture is presented, including a discussion on the effects of induced S-parameter analysis, phase shift and Smith chart analysis, and power transmission characteristics.

Iaith wreiddiolSaesneg
Teitl2012 International Conference on Informatics, Electronics and Vision, ICIEV 2012
CyhoeddwrInstitute of Electrical and Electronics Engineers Inc.
Tudalennau632-635
Nifer y tudalennau4
ISBN (Argraffiad)9781467311519
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 4 Hyd 2012
Cyhoeddwyd yn allanolIe
Digwyddiad2012 1st International Conference on Informatics, Electronics and Vision, ICIEV 2012 - Dhaka, Bangladesh
Hyd: 18 Mai 201219 Mai 2012

Cyfres gyhoeddiadau

Enw2012 International Conference on Informatics, Electronics and Vision, ICIEV 2012

Cynhadledd

Cynhadledd2012 1st International Conference on Informatics, Electronics and Vision, ICIEV 2012
Gwlad/TiriogaethBangladesh
DinasDhaka
Cyfnod18/05/1219/05/12

Dyfynnu hyn