A CMOS power splitter for 2,45 GHz ism band RFID reader in 0,18 μm CMOS technology

Radio frequency identification (RFID) is one of the most rapidly growing technologies to be utilized in almost every sector for storing and retrieving data wirelessly. Current advancements in CMOS technology help the scientists and technologists to reduce the size and improve the functionalities of the RFID circuits. In this paper, the design of an RF-CMOS power splitter circuit in 0,18 μm Silterra RF-CMOS technology is illustrated for a 2,45 GHz RFID reader. Wilkinson power divider is chosen for the proposed power splitter circuit with on-chip inductors and capacitors. The proposed power splitter achieves a maximum insertion loss of 10 dB. AWR Microwave Office® is used for the simulation of the circuit and for determination of its S-parameters. To design the inductors with accurate values in 2,45 GHz Sonnet® is used whereas Cadence® is used for capacitor and resistor layout.